Download Coulomb Screening by Mobile Charges: Applications to by Jean-N. Chazalviel PDF

By Jean-N. Chazalviel

The notion of penning this publication orIgmates from a guideline of Bernard Sapoval: "Why do not you write it?" he requested. "Coulomb screening is an issue that everyone encounters in lots of varied contexts, and there's no textbook that gathers a few of the elements ofthe topic. " The content material ofthe publication, in a shorter shape, was once first taught for 4 years as a path in Dipl6me d'Etudes Approfondies Sciences des Materiaux, headed by means of Prof. J. -F. Petroff, at Paris VI college. the current prolonged model was once written after discussions with Alia Margolina-Litvin. a necessary characteristic of screening is its position in lots of assorted clinical parts. as a result, the e-book is meant to be used by means of a multidisciplinary readership. studying it calls for just a easy wisdom ofelectromagnetism, effortless quantum mechanics, and thermal physics. The spirit of the pre­ sentation is "simplicity first": new suggestions (e. g. , dielectric functionality) are first brought of their most basic shape and are steadily prolonged to extra generality. The booklet remains at a uncomplicated point, and extra summary advancements that will were integrated were both passed over, rele­ gated to an appendix, or summarized in a qualitative demeanour. except those regulations, care has been taken to maintain the presentation as rigorous as attainable: the subjects addressed are handled quantitatively, the implications are given in mathematical shape, and the reader can be in a position to fol­ low the algebra the entire means through.

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Extra resources for Coulomb Screening by Mobile Charges: Applications to Materials Science, Chemistry, and Biology

Sample text

The electronic structure then consists of 2-D subbands [wave functions qJ,,(z) exp(ikxx + ikyY)]. If T is low and the layer is thin enough, the splitting between the subbands is sufficiently large that the population of the lowest subband dominates over all the other ones. This realizes a 2-D electron gas. However, doping is necessary in order to have a nonnull electron density. Donors may be incorporated directly in the GaAs layer, but a better electron mobility may be achieved if they are rather located in the GaxAll_xAs substrate, at some distance d from the GaAs layer.

The product np does not depend on the Fermi level: np = NeNv exp( -Eg/kBT) = nl (law of mass action). Neutrality of the intrinsic semiconductor further implies n = p, hence n = p = ni (intrinsic carrier concentration). Incorporating impurities into the semiconductor lattice generally results in the appearance of energy levels in the gap. Of most interest are "shallow" impurities. Shallow-donor impurities, such as column-V elements in Si or 48 II. Screening of a Static Charge Distribution Beyond the Linear Regime Ge, introduce states at energy levels ED located close to the conduction band.

If instead of assuming constant pressure, we had assumed constant volume (which makes little difference in practice), the same reasoning would have yielded 15 Fscreen = QrMO)j2. Since F = V - TS, we would like to identify the various contributions to I5Fscreen. ). For simplicity, we will also assume that there is a single kind of mobile charge (say electrons). (a) Express, as a function of V o, the bare interaction energy VI between the point charge Q and the charges from the screening cloud. (b) Another energy contribution V 2 arises from the repulsion between the charges of the screening cloud.

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