Download Transmission Electron Microscopy of Semiconductor by Andreas Rosenauer PDF

By Andreas Rosenauer

This ebook offers instruments compatible for the quantitative research of semiconductor electron microscopy. those instruments permit for the actual decision of the composition of ternary semiconductor nanostructures with a spatial answer at close to atomic scales. The booklet specializes in new equipment together with pressure country research in addition to review of the composition through the lattice fringe research (CELFA) procedure. the fundamentals of those systems in addition to their merits, drawbacks and assets of mistakes are all mentioned. The innovations are utilized to quantum wells and dots to be able to supply perception into kinetic development results akin to segregation and migration. within the first a part of the booklet the basics of transmission electron microscopy are supplied. those are wanted for an realizing of the electronic picture research thoughts defined within the moment a part of the booklet. There the reader will locate details on diverse tools of composition choice. The 3rd a part of the booklet specializes in functions corresponding to composition selection in InGaAs Stranski--Krastanov quantum dots. ultimately it's proven how an development within the precision of the composition evaluate might be bought by way of combining CELFA with electron holography. this is often established for an AlAs/GaAs superlattice.

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Read or Download Transmission Electron Microscopy of Semiconductor Nanostructures: An Analysis of Composition and Strain State (Springer Tracts in Modern Physics) PDF

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Extra info for Transmission Electron Microscopy of Semiconductor Nanostructures: An Analysis of Composition and Strain State (Springer Tracts in Modern Physics)

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M. Cowley: “Electron diffraction: an introduction”. In: Electron Diffraction Techniques. ed. M. Cowley (Oxford University Press, Oxford, 1992), p. 152 13, 26 4. H. E. Burge: Acta Cryst. 15, 15 (1962) 17 5. A. S. Turner: Acta Cryst. A 24, 390 (1968) 17 6. A. Stadelmann: Ultramicroscopy 51, 131 (1987) 17, 27 7. D. Van Dyck, M. Op de Beeck: Ultramicroscopy 64, 99 (1996) 30, 31 3 Image Formation The starting point for this chapter is the wave function of the electron at the object exit surface. Here we follow the electron wave from the object to the image and describe the nonlinear process of image formation.

As a result, the values IAn form a map of the noise part |N |2 . The noise part for each pixel is calculated by bilinear interpolation with respect to IAn . The example in Fig. 3 demonstrates the efficiency of the procedure described above [9]. 3a shows a part of the power spectrum |C|2 , and a small part of the lattice image in the inset. The power spectrum after noise reduction, |CNr |2 , is depicted in Fig. 3b, which also contains a small part of the lattice image that results from the inverse Fourier transform of CNr .

54) is neglected. 50) leads to the condition Γ (k) := ∂S 2 ∂ Ψ (k) =0 ∀k . 55), we obtain 2 Γ (k) = − N N j=1 δ I (j) (k′′ )Ψ ⋆ (k − k′′ )τ (j) (k) τ ⋆ (j) (k − k′′ ) d2 k′′ . 3 Reconstruction of the Electron Wave Function Γ (k) = −τ (j) 2 (k) N 49 N j=1 Ψ ⋆ (k′ ) τ ⋆ (j) (k′ ) δ I (j) (k − k′ ) d2 k′ . 58) where the second line makes use of a Fourier transform, which enables the application of a fast Fourier transform (FFT) to speed up the computation. 58) becomes ΓΣ = − 2 N (2M + 1) N × j+M (j) j=1 m=j−M fT (m − j)ǫ τ (j) F F −1 (Ψ ⋆ τ ⋆ (m) ) F −1 δ IΣ .

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